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This thesis investigates ways to achieve static and dynamic characterization of semiconductors for high power applications such as power grid or train traction. The chapter takes also into consideration the advantages, or disadvantages, with different electrical characterization techniques, as well as limitations for each characterization technique when applying electrical techniques for analysis of nanoscale materials and devices. The static and dynamic characterization of six different sic mosfets from different manufacturers are presented

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The static characterization consists of the output characteristics, transfer characteristics and device capacitances However, the measurement conditions in the data sheet often differ from the target application or there is still no detailed data at all. High temperature (up to 150 °c) static

Static characterization results are discussed in section iii, and the relevant semiconductor physics explanations are given

Section iv shows and discusses the dynamic characterization results, and the vi alignment, which is a key procedure of data processing, is given in detail. In section 3, the static and dynamic measurements are presented and their discrepancies are discussed The set of criteria defined for the instruments, which are used to measure the quantities which are slowly varying with time or mostly constant, i.e., do not vary with time, is called ‘static characteristics’. Ohmic contacts and real structures

Current vs voltage and capacitance vs voltage characterization of rectifying structures and what can be extracted from them. The static characteristics of a power semiconductor or module are the basic prerequisites for the development of a power electronic system